CHARACTERIZATION OF ZnO NANOFILMS DEPOSITED BY CBD-AμW
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https://doi.org/10.17533/udea.rcm.19371Palabras clave:
ZnO, Semiconductor de banda ancha, Deposición por baño químico, Rayos XResumen
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Nomura, K., Kamiya, T., Ohta, H., Ueda, K., Hirano, M., Hosono, H., “Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystallineInGaO3(ZnO)5films”,AppliedPhysicsLetters,Vol.85,No.11,pages1993-1995,2004. DOI: https://doi.org/10.1063/1.1788897
Hao, X. T., Tan, L.W., Ong, K. S., Zhu, F., “High-performance low-temperature transparent conducting aluminum-doped ZnO thin films and applications”, Journal of Crystal Growth, Vol. 287, No. 1, pages 44-47, 2006. DOI: https://doi.org/10.1016/j.jcrysgro.2005.10.040
Ellmer, K., “Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties”, Journal of Physics D: Applied Physics, Vol. 33, pages R17.-R32, 2000. DOI: https://doi.org/10.1088/0022-3727/33/4/201
Jagadish, C., Zinc Oxide Bulk, Thin Films and Nanostructures, First edition, Ed. Elsevier. England. 2006.
Calleja, J. M., Cardona, M., “Resonant Raman scattering in ZnO”, Physical Review B, Vol. 16, No. 8, pages 3753-3761, 1977. DOI: https://doi.org/10.1103/PhysRevB.16.3753
Cuscó, R., Alarcón-Lladó, E., Ibáñez, J., Artús, J., Jiménez, J., Wang, B., Callahan, M. J., “Temperature dependence of Raman scattering in ZnO”, Physical Review B, Vol. 75, pages 165202-165202-11, 2007. DOI: https://doi.org/10.1103/PhysRevB.75.165202
Serrano, J., Romero, A. H., Manjón, F. J., Lauck, R., Cardona, M., Rubio, M. A., “Pressure dependence of the lattice dynamics of ZnO: An ab initio approach”, Physical Review B, Vol. 69. pages 094306-1- 094306-14, 2004. DOI: https://doi.org/10.1103/PhysRevB.69.094306
Weinstein, B. A., “Pressure dependent optical phonon anharmonicity in GaP”, Solid State Communications, Vol. 20, No. 10, pages 999-1003, 1976. 9.Serrano, J., Manjón, F. J., Romero, A. H., Widulle, F., Lauck, R., Cardona, M., “Dispersive Phonon Linewidths: The E2 Phonons of ZnO”, Physical Review Letters, Vol. 90, No. 5, pages 055510-1- 055510-4, 2003. DOI: https://doi.org/10.1016/0038-1098(76)90492-0
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Derechos de autor 2014 Revista Colombiana de Materiales

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