CHARACTERIZATION OF ZnO NANOFILMS DEPOSITED BY CBD-AμW

Joel Díaz Reyes; Javier Martínez Juárez; David Hernández de la Luz

doi:10.17533/udea.rcm.19371

Authors

Joel Díaz Reyes Meritorious Autonomous University of Puebla
Javier Martínez Juárez Instituto Politécnico Nacional
David Hernández de la Luz Meritorious Autonomous University of Puebla

DOI:

https://doi.org/10.17533/udea.rcm.19371

Keywords:

ZnO, Wide bandgap Semiconductor, Chemical bath deposition, X-Ray difraction

Abstract

The physical properties of ZnO nanofilms are studied as a function of the urea concentration in the growth solution. ZnO is grown by Chemical Bath Deposition technique activated by microwaves (CBD-AμW). The chemical stoichiometry was determined by energy dispersive spectroscopy (EDS) measurements on the ZnO nanofilms. By X-rays scattering is obtained a polycrystalline hexagonal wurtzite type structure of grown ZnO films. By Raman spectroscopy is confirmed the wurtzite type structure of ZnO films and their Raman spectra show 4 main peaks at 444, 338, 104 and 78 cm-1 that correspond to the modes E2high, (E2high - E2low), E2low, which are associated to the oxygen and zinc sublattices and an unidentified band.

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Author Biographies

Joel Díaz Reyes, Meritorious Autonomous University of Puebla

Ph. D., Meritorious Autonomous University of Puebla, Puebla, Mexico

Javier Martínez Juárez, Instituto Politécnico Nacional

Ph. D., CIBA, Instituto Politécnico Nacional. Tepetitla, Tlaxcala, Mexico

David Hernández de la Luz, Meritorious Autonomous University of Puebla

Ph. D., Meritorious Autonomous University of Puebla, Puebla, Mexico

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