Early fault detection in SiC-MOSFET with application in boost converter

Keywords: Semiconductor, silicon carbide, fault-detection

Abstract

This paper presents the design of a fault detection circuit applied to a silicon carbide Mosfet (SiC-Mosfet). Fault detection is done by monitoring the behavior of the gate signal. The most important characteristic that has been reported in literature is quick detection since the evaluation is done while the SiC Mosfet is turning-on. With this method fast detection is allowed for short-circuit and open-circuit failure with small times for detection which prevents to spread the failure to the full system. To validate the fault detection circuit a boost converter with SiC-Mosfet was designed. Experimental results validate the reliability of the proposal.

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Author Biographies

Leobardo Hernández-González, Instituto Politécnico Nacional

ESIME Culhuacan

Climaco Arvizu-Ogilvie, Instituto Politécnico Nacional
ESIME Culhuacan
Alejandro Tapia-Hernández, Continental Automotive
Instrumentation and Driver HMI
Marco Antonio Rodríguez-Blanco, Universidad Autónoma del Carmen
Departamento de Ingeniería Electrónica

References

R. Singh, “Reliability and performance limitations in sic power devices,” Microelectronics Reliability, vol. 46, no. 5-6, pp. 713–730, May 2006.

A. A. et. al., “Progress in silicon carbide power devices,” in 64th IEEE Devices Research Conference, Pennsylvania, USA, 2006, pp. 155–158.

J. C. Zolper, “Emerging silicon carbide power electronics

components,” in 20th Annu. IEEE Appl. Power Electron. Conf., Austin, TX, USA, 2005, pp. 11–17.

M. Holz, G. Hultsch, T. Scherg, and R. Rupp, “Reliability considerations for recent infineon sic diode releases,” Microelectronics Reliability, vol. 47, no. 9-11, pp. 1741–1745, Sep 2007.

R. S. Chokhawala and S. Sobhani, “Switching voltage transient protection schemes for high-current igbt modules,” IEEE Trans. Ind. Appl., vol. 33, no. 6, pp. 1601–1610, Nov 1997.

R. S. Chokhawala, J. Catt, and L. Kiraly, “A discussion on igbt shortcircuit behavior and fault protection schemes,” IEEE Trans. Ind. Appl., vol. 31, no. 2, pp. 256–263, Mar 1995.

R. Pagano, K. S. Y. Chen, S. Musumeci, and A. Raciti, “Short circuit analysis and protection of power module igbts,” in 20th Annu. IEEE Appl. Power Electron. Conf., Austin, TX, USA, 2005, pp. 777–783.

F. Huang and F. Flett, “Igbt fault protection based on di/dt feedback control,” in IEEE Power Electronics Specialists, Orlando, Florida, USA, 2007, pp. 1913–1917.

B. G. Park, J. B. Lee, and D. S. Hyun, “A novel short-circuit detecting scheme using turn-on switching characteristic of igbt,” in IEEE Industry Applications Society Annual Meeting, Edmonton, Canada, 2008, pp. 1–5.

T. J. Klim, W. C. Lee, and D. S. Hyun, “Detection method for open-circuit fault in neutral-point-clamped inverter systems,” IEEE Trans. Ind. Electron., vol. 56, no. 7, pp. 2754–2763, Mar 2009.

W. Sleszynski, J. Nieznanski, and A. Cichowski, “Open-transistor fault diagnostics in voltage-source inverters by analyzing the load currents,” IEEE Trans. Ind. Electron., vol. 56, no. 11, pp. 4681–4688, Jun 2009.

K. Rothenhagen and F. W. Fuchs, “Performance of diagnosis methods for igbt open circuit faults in three phase voltage source inverters for ac variable speed drives,” in Proc. Eur. Conf. Power Electron. Appl., Dresden, Germany, 2005, pp. 1–10.

Y. X. et al., “Prognostic and warning system for power-electronic modules in electric, hybrid electric, and fuel-cell vehicles,” IEEE Trans. Ind. Electron., vol. 55, no. 6, pp. 2268–2276, May 2008.

J. Klima, “Analytical investigation of an induction motor drive under inverter fault mode operations,” IEEE Proc. Elect. Power Appl., vol. 150, no. 3, pp. 255–262, May 2003.

M. A. R. et al., “A failure detection strategy for igbt based on gate voltage behavior applied to a motor drive system,” IEEE Trans. Ind. Electron., vol. 58, no. 5, pp. 1625–1633, May 2011.

M. R. et al., “Aspectos críticos en el diseño de un circuito de detección de fallas en el igbt basado en la medición de la señal de compuerta,” in Congreso Internacional sobre Innovación y Desarrollo Tecnológico, Cuernavaca Morelos, México, 2010, pp. 1–5.

M. A. R. et al., “Study of a novel electronics circuit for detecting faults in the igbt,” IEEE Latin America Transactions, vol. 12, no. 3, pp. 402–409, May 2014.

Cree Company. (2016) C2m0040120d silicon carbide power mosfet. Accessed December, 2016. [Online]. Available: https://www.wolfspeed.com/power/products/sic-mosfets/table

B. Baliga, Fundamentals of Power Semiconductor Devices, 1st ed. USA: Springer, 2018.

N. Mohan, T. M. Undeland, and W. P. Robbins, Power Electronics Converter Applications and Design, 2nd ed. New York USA: John Wiley & Sons INC, 1995.

Published
2018-05-11