Influence of ionic bombardment on cubic boron nitride (c-BN) thin film deposition by r. f. magnetron sputtering


  • Gilberto Bejarano Gaitán SENA
  • José Manuel Roque Caicedo SENA
  • Pedro Prieto Pulido Universidad del Valle
  • Gustavo Zambrano Universidad del Valle
  • Eval Baca Miranda Ciudadela Universidad Meléndez


magnetron sputtering, cubic boron nitride, ion bombardment


Thin films of cubic Boron Nitride (c-BN) were deposited by d. c. and r. f. (13,56 MHz) multi-target magnetron sputtering from high-purity (99,99 %) hexagonal boron nitride (h-BN) target, in an Ar (95%)-N2 (5%) gas mixture. Films were deposited at 300 and 900 oC, with power density of 7 and 24 W/cm2. In order to obtain the highest fraction of the c-BN phase, a d. c. substrate bias voltage between 0 and -250 V, as well as an r. f. substrate bias voltage between 0 V and 350 V were applied during the film growth. Characterization of the microstructure, composition, morphology, topography and thickness of the films was carried out by Fourier Transformed Infrared Spectroscopy (FTIR), Scanning Electron Microscopy (SEM) and Atom Force Microscopy (AFM). It was found that BN films deposited at 300 oC, at a pressure of 4 x 10-3 mbar and under -150 V of r. f. bias, applied for 35 min, presented the highest c-BN fraction, close to 85%.

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Author Biographies

Gilberto Bejarano Gaitán, SENA

Centro ASTIN.

José Manuel Roque Caicedo, SENA

Centro ASTIN.

Pedro Prieto Pulido, Universidad del Valle

Centro de Excelencia en nuevos materiales

Gustavo Zambrano, Universidad del Valle

Centro de Excelencia en nuevos materiales

Eval Baca Miranda, Ciudadela Universidad Meléndez

Facultad de Ciencias, Departamento de Física


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How to Cite

Bejarano Gaitán, G., Roque Caicedo, J. M. ., Prieto Pulido, . P., Zambrano, G., & Baca Miranda, E. (2006). Influence of ionic bombardment on cubic boron nitride (c-BN) thin film deposition by r. f. magnetron sputtering. Revista Facultad De Ingeniería Universidad De Antioquia, (37), 188–199. Retrieved from