Power deposition influence on the electrical and optical properties of Sn1-xO2Nbx thin films obtained by sputtering





Magnetron sputtering, thin film, transparent conductors


In a solid, the electrical conductivity and optical transparency seem to be two  contradictory physical properties. Conductive materials are opaque, and transparent solids  are electrical insulators. Combinations of these two physical properties in a material make  it appropriate for application in many optoelectronic devices. The coincidence of these two  properties  has  been  mainly  ascribed  to  point  defects  in  the  crystal  lattice.  In  this  work,   we  performed  structural,  electrical  and  optical  characterization  of  thin  films  of  one  of  the   most  promising  transparent  conductive  oxides  Sn 1-x O 2 Nb x .  The  films  were  grown  on  glass   substrates  by  RF  magnetron  sputtering  technique.  As  the  deposition  power  was  varied,   it  was  found  that  the  electrical  conductivity  of  the  films  increased  with  increasing  power   deposition, and they showed a preferential growth in the (200) direction. All films exhibited  optical transmittance in the visible range larger than 80%.

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Author Biographies

José Ignacio Uribe Alzate, Universidad de antioquia

Estudiante de doctorado. Grupo de Estado Sólido, Instituto de Física.

Franklin Jaramillo Isaza, Universidad de Antioquia


Grupo de Estado Sólido, Instituto de Física

Jaime Alberto Osorio Vélez, Universidad de Antioquia


Instituto de física, Grupo de Estado sólido

Juan Esteban Calle Montoya, Universidad de Antioquia

Estudiante de doctorado

Centro de Investigación, Innovación y Desarrollo de Materiales (CIDEMAT), Facultad de Ingeniería


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How to Cite

Uribe Alzate, J. I., Jaramillo Isaza, F., Osorio Vélez, J. A., & Calle Montoya, J. E. (2016). Power deposition influence on the electrical and optical properties of Sn1-xO2Nbx thin films obtained by sputtering. Revista Facultad De Ingeniería Universidad De Antioquia, (80), 152–158. https://doi.org/10.17533/udea.redin.n80a16