Methodology to obtain the linear range of a transistor as a control element in a DC current source
DOI:
https://doi.org/10.17533/udea.redin.16313Keywords:
BJT transistor, polarization voltage, active regions, maximum power, loads resistance, direct current source, saturation voltageAbstract
This paper presents a methodology to develop direct current sources using BJT transistors on the linear region (active region). This region depends on the saturation voltage, maximum power and polarization voltage of the element; from these parameters it is obtained the load resistance range that ensures a constant current. The methodology is used to develop a DC current source prototype of 2A and the range of the load resistance is defined by the transistor characteristics. The temperature and power constrains are taking into account.
Downloads
References
L. Marshall. “Circuits and Systems Expositions on the Application of Thevenin and Norton Equivalent Circuits and Signal Flow Graphs to the Small-Signal Analysis of Active Circuits”. IEEE Transactions on Circuits and Systems I: Fundamental Theory and Application. Vol. 43. 1996. pp. 885-893. DOI: https://doi.org/10.1109/81.542279
F. Mohamed. “On Thevenin’s and Norton’s Equivalent Circuits”. IEEE Transactions on Education. Vol. 25. 1982. pp. 99-102. DOI: https://doi.org/10.1109/TE.1982.4321556
H. Zhao. Discussion on the Thevenin’s theorem and Norton’s theorem. International Conference on Electronic & Mechanical Engineering and Information Technology. Harbin, Heilongjiang, China. 2011. pp 520-522.
W. Hayt. Análisis en circuitos en ingeniería. 7th ed. Ed. McGraw-Hill. México D.F, México. 2010. pp. 131- 145.
Bruce. A. Circuitos - Ingeniería, conceptos y análisis de circuitos eléctricos lineales. Ed. Thomson Learning. México D.F, México. 2001. pp. 66-78.
R. Boylestad, L. Nashelsky. Electronic Devices and Circuit Theory. 6th ed. Ed. Prentice –Hall Inc. A Simon & Schuster Company. New Jersey, US. 1997. pp.138- 180.
H. Rashid, Electrónica de potencia: circuitos, dispositivos y aplicaciones. 2nd ed. Ed. Pearson Education. México D.F, México. 1995. pp. 267-287.
S. Erné, H. Luther. “High-Precision DC-Current Source”. IEEE Transactions on Instrumentation and Measurement. Vol. 24. 1975. pp. 345-348. DOI: https://doi.org/10.1109/TIM.1975.4314456
D. Holburn. A current source based on JFET. Departament of Engeering, University of Cambridge. Available on: http://www.eng.cam.ac.uk. Accessed: 2-May-2010.
Semiconductor Components Industries. Silicon Power Transistor. Available on: http://www.datasheetcatalog.org/datasheet2/6/0e6c74usfjslcuocssiwi9j1p4cy.pdf. Accessed: 1-Nov-2009.
Y. Osorno. Diseño e implementación de fuentes de corriente DC, para aplicaciones didácticas en el laboratorio de circuitos eléctricos. Trabajo de Grado. Universidad de Antioquia. Medellín, Colombia. 2011. pp. 51-64.
Downloads
Published
How to Cite
Issue
Section
License
Copyright (c) 2018 Revista Facultad de Ingeniería
This work is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.
Revista Facultad de Ingeniería, Universidad de Antioquia is licensed under the Creative Commons Attribution BY-NC-SA 4.0 license. https://creativecommons.org/licenses/by-nc-sa/4.0/deed.en
You are free to:
Share — copy and redistribute the material in any medium or format
Adapt — remix, transform, and build upon the material
Under the following terms:
Attribution — You must give appropriate credit, provide a link to the license, and indicate if changes were made. You may do so in any reasonable manner, but not in any way that suggests the licensor endorses you or your use.
NonCommercial — You may not use the material for commercial purposes.
ShareAlike — If you remix, transform, or build upon the material, you must distribute your contributions under the same license as the original.
The material published in the journal can be distributed, copied and exhibited by third parties if the respective credits are given to the journal. No commercial benefit can be obtained and derivative works must be under the same license terms as the original work.
Twitter